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| AOD472 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD472 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD472 is Pb-free (meets ROHS & Sony 259 specifications). AOD472L is a Green Product ordering option. AOD472 and AOD472L are electrically identical. TO-252 D-PAK Features 1.4 VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) <6 m (VGS = 10V) RDS(ON) <9.5 m (VGS = 4.5V) 193 18 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 25 20 50 50 150 30 135 50 25 3 2.1 -55 to 175 Units V V A A mJ W W C TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25C Repetitive avalanche energy L=0.3mH Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient B Maximum Junction-to-Case Symbol t 10s Steady-State Steady-State RJA RJC Typ 15 41 2.1 Max 20 50 3 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD472 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=20V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125C VGS=4.5V, ID=20A gFS VSD IS Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current 1 150 5 7.5 7.6 49 0.74 1 50 2050 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 485 280 0.86 34 VGS=10V, VDS=12.5V, ID=20A 17 5 3.5 7.5 VGS=10V, VDS=12.5V, RL=0.68, RGEN=3 IF=20A, dI/dt=100A/s 11 27 8 30 19 36 1.5 41 22 2460 9.5 S V A pF pF pF nC nC nC nC ns ns ns ns ns nC 6 m 1.4 Min 25 1 5 100 2.5 Typ Max Units V A nA V A STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev1: March 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD472 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 10V 100 ID (A) ID(A) 3.5V 50 3.0V VGS=2.5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 6V 4.5V 60 50 40 30 125C 20 10 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 25C 1.4 VDS=5V 494 692 593 830 10 Normalized On-Resistance 1.8 1.6 193 18 8 RDS(ON) (m) VGS=4.5V 6 VGS=10V VGS=10V, 20A 1.4 1.2 1 0.8 0 25 50 75 4 VGS=4.5V, 20A 2 0 10 20 30 40 50 60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 59 100 142 125 150 175 12 ID=20A 10 RDS(ON) (m) IS (A) 100 10 1 0.1 0.01 25C 125C 8 125C 6 25C 4 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.001 0.0001 0.00001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOD472 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 35 40 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 TJ(Max)=175C, TC=25C 100 ID (Amps) 10s Power (W) 100s 10 RDS(ON) limited DC 1ms VDS=12.5V ID=20A 3000 2500 Capacitance (pF) 2000 1500 1000 500 0 0 Crss 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 5 25 Coss Ciss 1.4 494 692 593 830 193 18 200 160 120 80 40 0 0.0001 TJ(Max)=175C TC=25C 1 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 0.001 0.01 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 59 0.1 142 1 10 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOD472 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 ID(A), Peak Avalanche Current Power Dissipation (W) 50 40 30 20 10 0.00001 0.0001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 0.001 TA=25C 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) 1.4 494 692 593 830 60 50 Current rating ID(A) 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 50 40 Power (W) 193 18 TA=25C 30 20 10 0 0.01 0.1 1 59 142 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W PD Ton 1 10 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 T 100 1000 0.01 0.1 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
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